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DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1725 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This PA1725 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. 8 PACKAGE DRAWING (Unit : mm) 5 1, 2,3 4 5,6,7,8 ; ; ; ; Non connection Source Gate Drain FEATURES * 2.5-V gate drive and low on-resistance 1.8 MAX. * Built-in G-S protection diode * Small and surface mount package (Power SOP8) 0.05 MIN. * Low Ciss : Ciss = 950 pF TYP. 0.15 * RDS(on)3 = 30.0 m MAX. (VGS = 2.5 V, ID = 3.5 A) +0.10 -0.05 * * 1.44 RDS(on)1 = 21.0 m MAX. (VGS = 4.5 V, ID = 3.5 A) RDS(on)2 = 22.0 m MAX. (VGS = 4.0 V, ID = 3.5 A) 1 5.37 MAX. 4 6.0 0.3 4.4 0.8 0.5 0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 -0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 PA1725G ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 20 12 7 28 2.0 150 -55 to + 150 2 V V A A W C C Gate Protection Diode Source Gate Body Diode EQUIVALENT CIRCUIT Drain Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Notes 1. PW 10 s, Duty Cycle 1 % 2. Mounted on ceramic substrate of 1200 mm x 2.2mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G14049EJ1V0DS00 (1st edition) Date Published January 2000 NS CP(K) Printed in Japan The mark * shows major revised points. (c) 1999, 2000 PA1725 ELECTRICAL CHARACTERISTICS (TA = 25 C, All terminals are connected.) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 4.5 V, ID = 3.5 A VGS = 4.0 V, ID = 3.5 A VGS = 2.5 V, ID = 3.5 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.5 A VDS = 20 V, VGS = 0 V VGS = 12 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 3.5 A VGS(on) = 4.5 V VDD = 10 V RG = 10 ID = 7 A VDD = 16 V VGS = 4.5 V IF = 7 A, VGS = 0 V IF = 7 A, VGS = 0 V di/dt = 100 A/ s 950 310 160 30 120 70 70 9.6 1.7 4.1 0.8 40 27 0.5 5.0 MIN. TYP. 16.5 17.0 22.0 1.0 11.0 10 10 MAX. 21.0 22.0 30.0 1.5 UNIT m m m V S * * Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge A A pF pF pF ns ns ns ns nC nC nC V ns nC * Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 3 GATE CHARGE D.U.T. D.U.T. RL PG. RG VDD ID VGS 0 = 1 s Duty Cycle 1 % ID Wave Form VGS VGS Wave Form IG = 2 mA VGS(on) 90 % RL VDD 0 10 % PG. 90 % 90 % 50 ID 0 10 % 10 % td(on) ton tr td(off) toff tf 2 Data Sheet G14049EJ1V0DS00 PA1725 * TYPICAL CHARACTERISTICS (TA = 25 C , All terminals are connected.) FORWARD TRANSFER CHARACTERISTICS 100 10 Pulsed 30 25 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed ID - Drain Current - A ID - Drain Current - A 1 0.1 0.01 TA = 125C 75C 25C -25C 20 15 10 5 VGS = 4.5 V 4.0 V 2.5 V 0.001 VDS = 10 V 0 1 2 3 4 0 0.4 0.8 1.2 1.6 2.0 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - m VDS - Drain to Source Voltage - V 50 40 30 20 Pulsed RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 80 Pulsed 70 60 50 40 30 20 10 0 ID = 3.5 A 1.4 A 5 10 15 VGS = 2.5 V 4.5 V 10 0 ID = 3.5 A - 50 0 50 100 150 Tch - Channel Temperature - C VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - m 70 60 50 40 30 20 10 0 VGS = 2.5 V VGS(off) - Gate to Source Cut-off Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA 1.0 4.0 V 4.5 V 0.5 1 10 100 - 50 0 50 100 150 ID - Drain Current - A Tch - Channel Temperature - C Data Sheet G14049EJ1V0DS00 3 PA1725 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed |yfs| - Forward Transfer Admittance - S 100 IF - Diode Forward Current - A VDS = 10 V Pulsed 100 VGS = 4.0 V 10 0V 10 TA = -25C 25C 75C 125C 1 1 0.1 0.001 0.01 0.1 1 10 100 0.1 0 0.4 0.8 1.2 1.6 2.0 ID- Drain Current - A VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000 Ciss, Coss, Crss - Capacitance - pF VGS = 0 V f = 1 MHz 1 000 Ciss Coss 100 Crss 10 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 000 trr - Reverse Recovery Diode - ns 100 VDS - Drain to Source Voltage - V di/dt =100 A/s VGS = 0 V 6 10 VGS 4 2 VDS 0 5 10 15 20 25 0 30 10 1 0.1 1 10 100 ID - Drain Current - A QG - Gate Charge - nC 4 Data Sheet G14049EJ1V0DS00 VGS - Gate to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 30 12 ID = 7 A VDD = 16 V 10 10 V 4V 20 8 PA1725 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2.8 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60 80 Mounted on ceramic substrate of 1200 mm 2 x2.2 mm 0 20 40 60 80 100 120 140 160 100 120 140 160 TA - Ambient Temperature - C TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 TA = 25 C Single Pulse ID(pulse) = 28 A PW = ID - Drain Current - A ) = Lim 4. ite 5 V) d 1 s 1 m s R (V DS(o 10 10 ID(DC) = 7 A n m S s 10 G 0 m s Po we rD iss 1 ip at io n Li m ite 0.1 0.01 Mounted on ceramic substrate of 1200 mm 2 x2.2 mm d 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - C/W 100 Rth(ch-A) = 62.5C/W 10 1 0.1 Mounted on ceramic substrate of 1200 mm2 x 2.2 mm Single Pulse 0.01 100 1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s Data Sheet G14049EJ1V0DS00 5 PA1725 [MEMO] 6 Data Sheet G14049EJ1V0DS00 PA1725 [MEMO] Data Sheet G14049EJ1V0DS00 7 PA1725 * The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8 |
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